Samsung is expected to announce the start of mass production of 3nm chips next week. In doing so, the company will overtake TSMC, whose production of 3nm chips is expected to start in the second half of this year.
According to a GSM Arena report quoting Yonhap News, compared to its 5nm process, Samsung’s 3nm node will result in a 35% reduction in area, a 30% increase in performance, or a 50% reduction in power consumption. of energy (which was used for the Snapdragon 888 and Exynos 2100).
By moving to a Gate-All-Around (GAA) design for the transistors, this will be accomplished. The foundry can shrink transistors without affecting their ability to carry current, which is the next step after FinFET. The MBCFET flavor is the GAAFET design used in the 3nm node.
Last month, US Vice President Joe Biden visited Samsung’s facilities in Pyeongtaek to see a demonstration of the company’s 3nm technology. There were rumors that the company could spend $10 billion (almost Rs. 78,000 crore) to build a 3nm foundry in Texas last year. The plant is expected to start operating in 2024, with an investment that has reached $17 billion (almost Rs. 1.32,000 crore).
The yield of Samsung’s 3nm process “approaches a similar level to that of the 4nm process”, the company said in October last year. Analysts believe that Samsung’s 4nm node had serious performance issues, although the company never provided official statistics.
An MBCFET-based 2nm node is also included in the company’s roadmap for 2023, along with a second-generation 3nm node in 2025.